Method for forming metal film by ALD using beta-diketone metal complex
US8133555B2 · kind B2 · utility
1Cited by
144References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 14, 2008 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Oct 13, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45542
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a single-metal film on a substrate by plasma ALD includes: contacting a surface of a substrate with a β-diketone metal complex in a gas phase; exposing molecule-attached surface to a nitrogen-hydrogen mixed plasma; and repeating the above steps, thereby accumulating atomic layers to form a single-metal film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.