Pattern forming method and apparatus
US8133663B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2007 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Nov 20, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern forming method includes forming a resist film or sequentially forming a resist film and a protection film in this order on a surface of a substrate; then, performing immersion light exposure that includes immersing the resist film or the resist film and the protection film formed on the substrate in a liquid during light exposure, thereby forming a predetermined light exposure pattern on the resist film; and performing a development process of the light exposure pattern by use of a development liquid, thereby forming a predetermined resist pattern. After the immersion light exposure and before the development process, the method further includes performing a hydrophilic process of turning a surface of the resist film or the protection film serving as a substrate surface into a hydrophilic state to allow the substrate surface to be wetted with the development liquid overall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.