Integrated RF ESD protection for high frequency circuits

US8133765B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Uwe Hodel · Munich, DE
• Wolfgang Soldner · Munich, DE

Key dates

• Filing date: Nov 16, 2010
• Grant date: Mar 13, 2012
• Expiry date: Nov 16, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a high-frequency integrated circuit requiring ESD protection for a circuit node. One or more metallic layer is deposited within the integrated circuit and patterned to form a transmission line. The metallic layers are generally already present in the integrated circuit for signal routing. The transmission line is coupled between the circuit node and a terminal of an ESD protection device, with a transmission line return conductor coupled to a high-frequency ground. The transmission line is formed with an electrical length that transforms the impedance of the ESD protection device substantially into an open circuit at the circuit node at an operational frequency of the integrated circuit. The other terminal of the ESD protection device is coupled to the high-frequency ground.