Method and apparatus of an inspection system using an electron beam
US8134125B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2008 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Nov 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31766
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.