Operating method of electrical pulse voltage for RRAM application
US8134865B2 · kind B2 · utility
6Cited by
3References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2009 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Jun 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Metal-oxide based memory devices and methods for operating and manufacturing such devices are described herein. A method for manufacturing a memory device as described herein comprises forming a metal-oxide memory element, and applying an activating energy to the metal-oxide memory element. In embodiments the activating energy can be applied by applying electrical and/or thermal energy to the metal-oxide material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.