Offset correction techniques for positioning substrates within a processing chamber
US8135485B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2008 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Apr 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot, which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.