Patent · US Active

Transistor device comprising an asymmetric embedded semiconductor alloy

US8138050B2 · kind B2 · utility

4Cited by

2References

23Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Vassilios Papageorgiou · Austin, US
Jan Hoentschel · Dresden, DE
Robert Neil Mulfinger · York Haven, US
Casey Scott · Dresden, DE

Key dates

Filing date	Sep 9, 2009
Grant date	Mar 20, 2012
Priority date	—
Expiry date	Feb 18, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0212
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Transistor characteristics may be adjusted on the basis of asymmetrically formed cavities in the drain and source areas so as to maintain a strain-inducing mechanism while at the same time providing the possibility of obtaining asymmetric configuration of the drain and source areas while avoiding highly complex implantation processes. For this purpose, the removal rate during a corresponding cavity etch process may be asymmetrically modified on the basis of a tilted ion implantation process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.