Patent · US Active

Bi-directional diode structure

US8138520B2 · kind B2 · utility

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3References
9Claims
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Inventors

Key dates

Filing dateJul 7, 2011
Grant dateMar 20, 2012
Priority date—
Expiry dateJul 7, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/983

Abstract

In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.