Patent · US Active

Semiconductor devices and methods of manufacture thereof

US8138539B2 · kind B2 · utility

10Cited by

10References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Barth · Munich, DE
Erwin Ruderer · Borgo San Lazzaro, DE
Alexander Von Glasow · Kleinmachnow, DE
Philipp Riess · Munich, DE
Erdem Kaltalioglu · Newburgh, US
Peter Baumgartner · Munich, DE
Thomas Benetik · Munich, DE
Helmut Tews · Poughkeepsie, US

Key dates

Filing date	Nov 29, 2007
Grant date	Mar 20, 2012
Priority date	—
Expiry date	Dec 31, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a capacitor plate includes a plurality of first parallel conductive members, and a plurality of second parallel conductive members disposed over the plurality of first parallel conductive members. A first base member is coupled to an end of the plurality of first parallel conductive members, and a second base member is coupled to an end of the plurality of second parallel conductive members. A connecting member is disposed between the plurality of first parallel conductive members and the plurality of second parallel conductive members, wherein the connecting member includes at least one elongated via.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.