High density helicon plasma source for wide ribbon ion beam generation
US8142607B2 · kind B2 · utility
5Cited by
6References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 28, 2008 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Jan 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.