Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrate
US8143137B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Feb 17, 2010 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Feb 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to integrated circuit fabrication, and more particularly to a method for fabricating a semiconductor device. An exemplary method for fabricating the semiconductor device comprises providing a substrate; forming pad oxide layers over a frontside and a backside of the substrate; forming hardmask layers over the pad oxide layers on the frontside and the backside of the substrate; and thinning the hardmask layer over the pad oxide layer on the frontside of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.