Methods and systems for forming thin films
US8143147B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2011 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Feb 10, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1016
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.