Self-aligned multi-dielectric-layer lift off process for laser diode stripes
US8143148B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2009 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Jul 14, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.