Method of polishing silicon wafer
US8147295B2 · kind B2 · utility
3Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2009 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Aug 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.