Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure

US8148234B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Gerhard Lammel · Lörrach, DE
• Hubert Benzel · Neckartenzlingen, DE
• Matthias Illing · Tübingen, DE
• Franz Laermer · Stuttgart, DE
• Silvia Kronmueller · Schwaikheim, DE
• Paul Farber · Stuttgart, DE
• Simon Armbruster · Wannweil, DE
• Ralf Reichenbach · Eßlingen, DE
• Christoph Schelling · Stuttgart, DE
• Ando Feyh · Palo Alto, US

Key dates

• Filing date: Mar 9, 2007
• Grant date: Apr 3, 2012
• Expiry date: Dec 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02667
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.