Method for producing a-IGZO oxide thin film
US8148245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2008 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Dec 24, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31786
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
There is provided a method for producing an a-IGZO oxide thin film by sputtering, which can control the carrier density of the film to a given value with high reproducibility. The method is an amorphous In—Ga—Zn—O based oxide thin film production method including: providing a sintered oxide material consisting essentially of indium (In), gallium (Ga), zinc (Zn), and oxygen (O) as constituent elements, wherein the ratio [In]/([In]+[Ga]) of the number of indium atoms to the total number of indium and gallium atoms is from 20% to 80%, the ratio [Zn]/([In]+[Ga]+[Zn]) of the number of zinc atoms to the total number of indium, gallium and zinc atoms is from 10% to 50%, and the sintered oxide material has a specific resistance of 1.0×10−1 Ωcm or less; and producing a film on a substrate by direct current sputtering at a sputtering power density of 2.5 to 5.5 W/cm2 using the sintered oxide material as a sputtering target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.