Patent · US Active

Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods

US8148252B1 · kind B1 · utility

8Cited by
2References
27Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 2, 2011
Grant dateApr 3, 2012
Priority date—
Expiry dateMar 2, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/811
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.