Boron nitride and boron-nitride derived materials deposition method
US8148269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2009 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Jun 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.