Derek R. Witty
39Patents
11h-index
78Co-inventors
78Inventor score
Filing activity: Nov 18, 1996 → Jun 28, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7018941B2 | Post treatment of low k dielectric films | Electricity | 648 | Expired |
| US8445075B2 | Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics | Electricity | 500 | Active |
| US8138104B2 | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure | Electricity | 458 | Active |
| US6465051B1 | Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling | Electricity | 191 | Expired |
| US7871926B2 | Methods and systems for forming at least one dielectric layer | Electricity | 77 | Active |
| US7112541B2 | In-situ oxide capping after CVD low k deposition | Electricity | 56 | Expired |
| US6413871B1 | Nitrogen treatment of polished halogen-doped silicon glass | Electricity | 25 | Expired |
| US9721784B2 | Ultra-conformal carbon film deposition | Electricity | 23 | Active |
| US7670924B2 | Air gap integration scheme | Emerging Cross-Sectional Technologies | 17 | Active |
| US8148269B2 | Boron nitride and boron-nitride derived materials deposition method | Electricity | 16 | Active |
| US7425716B2 | Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam | Electricity | 11 | Active |
| US7166544B2 | Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors | Electricity | 8 | Expired |
| US7611996B2 | Multi-stage curing of low K nano-porous films | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7790635B2 | Method to increase the compressive stress of PECVD dielectric films | Electricity | 7 | Active |
| US7867578B2 | Method for depositing an amorphous carbon film with improved density and step coverage | Electricity | 6 | Active |
| US8679987B2 | Deposition of an amorphous carbon layer with high film density and high etch selectivity | Electricity | 6 | Active |
| US10074534B2 | Ultra-conformal carbon film deposition | Electricity | 5 | Active |
| US8586487B2 | Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films | Electricity | 5 | Active |
| US8337950B2 | Method for depositing boron-rich films for lithographic mask applications | Electricity | 5 | Active |
| US7547643B2 | Techniques promoting adhesion of porous low K film to underlying barrier layer | Electricity | 4 | Expired |
| US8084105B2 | Method of depositing boron nitride and boron nitride-derived materials | Chemistry; Metallurgy | 4 | Active |
| US8389376B2 | Air gap integration scheme | Emerging Cross-Sectional Technologies | 4 | Active |
| US7816205B2 | Method of forming non-volatile memory having charge trap layer with compositional gradient | Electricity | 4 | Active |
| US7704816B2 | Boron derived materials deposition method | Electricity | 4 | Active |
| US8758638B2 | Copper oxide removal techniques | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.