Recessed channel array transistor (RCAT) structures

US8148772B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Brian S. Doyle · Portland, US
• Ravi Pillarisetty · Portland, US
• Gilbert Dewey · Beaverton, US
• Robert S. Chau · Beaverton, US

Key dates

• Filing date: Jan 31, 2011
• Grant date: Apr 3, 2012
• Expiry date: Jan 31, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

Recessed channel array transistor (RCAT) structures and method of formation are generally described. In one example, an electronic device includes a semiconductor substrate, a first fin coupled with the semiconductor substrate, the first fin comprising a first source region and a first drain region, and a first gate structure of a recessed channel array transistor (RCAT) formed in a first gate region disposed between the first source region and the first drain region, wherein the first gate structure is formed by removing a sacrificial gate structure to expose the first fin in the first gate region, recessing a channel structure into the first fin, and forming the first gate structure on the recessed channel structure.