Patent · US Active

Memory device and method

US8149643B2 · kind B2 · utility

9Cited by

70References

20Claims

0Family size

Assignee

Cypress Semiconductor Corporation · US

Inventors

Joseph Tzou · Belmont, US
Thinh Tran · Palo Alto, US
Jun Li · Palo Alto, US

Key dates

Filing date	Oct 23, 2008
Grant date	Apr 3, 2012
Priority date	—
Expiry date	Jul 3, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C8/12
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device and method may include separating alternating read and write accesses to different banks of a memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.