Joseph Tzou
24Patents
10h-index
17Co-inventors
72Inventor score
Filing activity: Jan 12, 1990 → Sep 25, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5656861A | Self-aligning contact and interconnect structure | Emerging Cross-Sectional Technologies | 124 | Expired |
| US7142477B1 | Memory interface system and method for reducing cycle time of sequential read and write accesses using separate address and data buses | Physics | 47 | Expired |
| US5168076A | Method of fabricating a high resistance polysilicon load resistor | Emerging Cross-Sectional Technologies | 37 | Expired |
| US5172211A | High resistance Polysilicon load resistor | Emerging Cross-Sectional Technologies | 34 | Expired |
| US5166771A | Self-aligning contact and interconnect structure | Electricity | 31 | Expired |
| US5483104A | Self-aligning contact and interconnect structure | Emerging Cross-Sectional Technologies | 27 | Expired |
| US7146454B1 | Hiding refresh in 1T-SRAM architecture | Physics | 24 | Expired |
| US5620919A | Methods for fabricating integrated circuits including openings to transistor regions | Electricity | 19 | Expired |
| US5124774A | Compact SRAM cell layout | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7269772B1 | Method and apparatus for built-in self-test (BIST) of integrated circuit device | Physics | 12 | Expired |
| US7728619B1 | Circuit and method for cascading programmable impedance matching in a multi-chip system | Electricity | 10 | Active |
| US8149643B2 | Memory device and method | Physics | 9 | Active |
| US7403446B1 | Single late-write for standard synchronous SRAMs | Physics | 7 | Expired |
| US7684257B1 | Area efficient and fast static random access memory circuit and method | Physics | 6 | Active |
| US8527802B1 | Memory device data latency circuits and methods | Physics | 6 | Active |
| US7196925B1 | Memory array with current limiting device for preventing particle induced latch-up | Physics | 6 | Expired |
| US8705310B2 | Access methods and circuits for memory devices having multiple banks | Physics | 4 | Active |
| US8040164B2 | Circuits and methods for programming integrated circuit input and output impedances | Electricity | 3 | Active |
| US8095747B2 | Memory system and method | Physics | 2 | Active |
| US9666255B2 | Access methods and circuits for memory devices having multiple banks | Physics | 1 | Active |
| US9640237B1 | Access methods and circuits for memory devices having multiple channels and multiple banks | Physics | 1 | Active |
| US7719908B1 | Memory having read disturb test mode | Physics | 1 | Active |
| US8873264B1 | Data forwarding circuits and methods for memory devices with write latency | Physics | 0 | Active |
| US8358557B2 | Memory device and method | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.