Patent · US Active

Gas treatment systems

US8152923B2 · kind B2 · utility

11Cited by
10References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 11, 2008
Grant dateApr 10, 2012
Priority date
Expiry dateNov 28, 2029

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/45574
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.