Nanowire MOSFET with doped epitaxial contacts for source and drain
US8153494B2 · kind B2 · utility
2Cited by
6References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 14, 2009 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Feb 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A FET structure with a nanowire forming the FET channel, and doped source and drain regions formed by radial epitaxy from the nanowire body is disclosed. A top gated and a bottom gated nanowire FET structures are discussed. The source and drain fabrication can use either selective or non-selective epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.