Method of fabricating an epitaxially grown layer on a composite structure
US8153500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2009 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Nov 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating materials by epitaxy by epitaxially growing at least one layer of a material upon a composite structure that has at least one thin film bonded to a support substrate and a bonding layer of oxide formed by deposition between the support substrate and the thin film. The thin film and the support substrate have a mean thermal expansion coefficient of 7×10−6 K−1 or more. The bonding layer is formed by low pressure chemical vapor deposition (LPCVD) of a layer of silicon oxide on the bonding face of the support substrate or on the bonding face of the thin film. The thin film has a thickness of 5 micrometers or less while the thickness of the layer of oxide is equal to or greater than the thickness of the thin film. The method also includes a heat treatment carried out at a temperature that is higher than the temperature for deposition of the layer of oxide of silicon and for a predetermined period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.