Polymer interlayer dielectric and passivation materials for a microelectronic device

US8154121B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Kunal Gaurang Shah · Sayla, IN
• Michael Haverty · Mountain View, US
• Sadasivan Shankar · Cupertino, US
• Doug B. Ingerly · Portland, US
• Grant Kloster · Lake Oswego, US

Key dates

• Filing date: Feb 26, 2008
• Grant date: Apr 10, 2012
• Expiry date: Sep 15, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Polymer interlayer dielectric and passivation materials for a microelectronic device are generally described. In one example, an apparatus includes one or more interconnect structures of a microelectronic device and one or more polymeric dielectric layers coupled with the one or more interconnect structures, the polymeric dielectric layers including copolymer backbones having a first monomeric unit and a second monomeric unit wherein the first monomeric unit has a different chemical structure than the second monomeric unit and wherein the copolymer backbones are cross-linked by a first cross-linker or a second cross-linker, or combinations thereof.