Dynamic and adaptive optimization of read compare levels based on memory cell threshold voltage distribution
US8154921B2 · kind B2 · utility
42Cited by
5References
20Claims
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Key dates
| Filing date | Apr 19, 2011 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Apr 19, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A process is performed periodically or in response to an error in order to dynamically and adaptively optimize read compare levels based on memory cell threshold voltage distribution. One embodiment of the process includes determining threshold voltage distribution data for a population of non-volatile storage elements, smoothing the threshold voltage distribution data using a weighting function to create an interim set of data, determining a derivative of the interim set of data, and identifying and storing negative to positive zero crossings of the derivative as read compare points.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.