Patent · US Active

Semiconductor component and method of determining temperature

US8155916B2 · kind B2 · utility

8Cited by

3References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Patrick Baginski · Oelde, DE
Reinhold Bayerer · Warstein, DE
Holger Ruething · Munich, DE
Daniel Domes · Schwäbisch Hall, DE

Key dates

Filing date	Jul 7, 2008
Grant date	Apr 10, 2012
Priority date	—
Expiry date	Mar 17, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/311
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

One embodiment provides a circuit arrangement integrated in a semiconductor body. At least one power semiconductor component integrated in the semiconductor body and having a control connection and a load connection is provided. A resistance component is thermally coupled to the power semiconductor component and likewise integrated into the semiconductor body and arranged between the control connection and the load connection of the power semiconductor component. The resistance component has a temperature-dependent resistance characteristic curve. A driving and evaluation unit is designed to evaluate the current through the resistance component or the voltage drop across the resistance component and provides a temperature signal dependent thereon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.