Method for manufacturing a junction
US8158451B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2009 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Dec 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device comprising a homojunction or a heterojunction with a controlled dopant (concentration) profile and a method of making the same. Accordingly, one aspect of the invention is a method for manufacturing a junction comprising forming a first semiconductor material comprising a first dopant having a first concentration and thereupon; forming a second semiconductor material comprising a second dopant, having a second concentration thereby forming a junction, and depositing by Atomic Layer Epitaxy or Vapor Phase Doping at least a fraction of a monolayer of a precursor suitable to form the second dopant on the first semiconductor material, prior to forming the second semiconductor material, thereby increasing the second concentration of the second dopant at the junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.