Strained semiconductor device and method of making same

US8158478B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jiang Yan · Beijing, CN
• Danny Pak-Chum Shum · Poughkeepsie, US

Key dates

• Filing date: Dec 18, 2009
• Grant date: Apr 17, 2012
• Expiry date: Dec 18, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

In a method of making a semiconductor device, a gate dielectric is formed over the semiconductor body. A floating gate is formed over the gate dielectric, an insulating region over the floating gate, and a control gate over the insulating region. The gate dielectric, floating gate, insulating region, and control gate constitute a gate stack. A stress is caused in the gate stack, whereby the band gap of the gate dielectric is changed by the stress.