Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device
US8158484B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2007 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Jan 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6748
Abstract
A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate, providing a first layer of a first semiconductor material over the semiconductor substrate, and providing a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material. The method further comprises removing a portion of the first layer and a portion of the second layer selectively according to the different rates of removal so as to provide a lateral layer and the vertical channel portion of the inverted T shaped channel structure and removing a portion of the lateral layer so as to provide the horizontal channel portion of the inverted T shaped channel structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.