Patent · US Active

Trench isolation structure having different stress

US8158486B2 · kind B2 · utility

1Cited by

1References

29Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Ralf van Bentum · Radebeul, DE
Klaus Hempel · Dresden, DE
Roland Stejskal · Freital, DE

Key dates

Filing date	Oct 2, 2006
Grant date	Apr 17, 2012
Priority date	—
Expiry date	Aug 20, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/0151
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By locally heating isolation trenches with different annealing conditions, a different magnitude of intrinsic stress may be obtained in different isolation trenches. In some illustrative embodiments, the different anneal temperature may be achieved on the basis of an appropriate mask layer, which may provide a patterned optical response for a lamp-based or laser-based anneal process. Consequently, the intrinsic stress of isolation trenches may be specifically adapted to the requirements of circuit elements, such as N-channel transistors and P-channel transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.