Process for forming a silicon-based single-crystal portion
US8158495B2 · kind B2 · utility
2Cited by
8References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2007 |
| Grant date | Apr 17, 2012 |
| Priority date | — |
| Expiry date | Aug 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon-based single-crystal portions are produced on a surface of a substrate, selectively in zones where a single-crystal material is initially exposed. To do this, a layer is firstly formed over the entire surface of the substrate, using a silicon precursor of the non-chlorinated hydride type, and under suitable conditions so that the layer is a single-crystal layer in the zones of the substrate where a single-crystal material is initially exposed and amorphous outside these zones. The amorphous portions of the layer are then selectively etched so that only the single-crystal portions of the layer remain on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.