Patent · US Active

Microresonator

US8159109B2 · kind B2 · utility

1Cited by
8References
15Claims
0Family size

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Key dates

Filing dateAug 4, 2010
Grant dateApr 17, 2012
Priority date
Expiry dateAug 4, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03H2009/02496
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.