Halogen assisted physical vapor transport method for silicon carbide growth
US8163086B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2007 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Feb 19, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.