Patent · US Active

Method of forming an aluminum oxide layer

US8163343B2 · kind B2 · utility

1Cited by

2References

23Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Shreyas Kher · Campbell, US
Christopher S. Olsen · Fremont, US
Lucien Date · Ottignies, BE

Key dates

Filing date	Sep 3, 2008
Grant date	Apr 24, 2012
Priority date	—
Expiry date	Dec 13, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0228
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods of forming aluminum oxide layers on substrates are disclosed. In some embodiments, the method includes depositing an aluminum oxide seed layer on the substrate using a first process having a first deposition rate. The method further includes depositing a bulk aluminum oxide layer atop the seed layer using a metalorganic chemical vapor deposition (MOCVD) process having a second deposition rate greater than the first deposition rate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.