Multi-step deposition control
US8163571B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2008 |
| Grant date | Apr 24, 2012 |
| Priority date | — |
| Expiry date | Jan 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For providing control of two-step or a multi-step deposition process, a method and a corresponding deposition system is provided comprising providing a deposition process having at least two sub-processes employing different sets of process parameters, wherein each set of process parameters comprises at least one process parameter. The method comprises controllably generating an actual value for at least one first process parameter by taking into account at least one previous value of the respective first process parameter, wherein each first process parameter is a process parameter of said at least two sets of process parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.