Patent · US Active

Multi-step deposition control

US8163571B2 · kind B2 · utility

3Cited by
4References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 29, 2008
Grant dateApr 24, 2012
Priority date
Expiry dateJan 29, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

For providing control of two-step or a multi-step deposition process, a method and a corresponding deposition system is provided comprising providing a deposition process having at least two sub-processes employing different sets of process parameters, wherein each set of process parameters comprises at least one process parameter. The method comprises controllably generating an actual value for at least one first process parameter by taking into account at least one previous value of the respective first process parameter, wherein each first process parameter is a process parameter of said at least two sets of process parameters.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.