Film formation method and apparatus for semiconductor process
US8168270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2007 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Jan 10, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45544
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.