Nonvolatile semiconductor memory device
US8169826B2 · kind B2 · utility
53Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2010 |
| Grant date | May 1, 2012 |
| Priority date | — |
| Expiry date | Oct 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device comprises: a plurality of first memory strings; a first select transistor having one end thereof connected to one end of the first memory strings; a first line commonly connected to the other end of a plurality of the first select transistors; a switch circuit having one end thereof connected to the first line; and a second line commonly connected to the other end of a plurality of the switch circuits. The switch circuit controls electrical connection between the second line and the first line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.