Tantalum sputtering target and method of manufacturing same
US8172960B2 · kind B2 · utility
11Cited by
11References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2004 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Jan 3, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a tantalum sputtering target manufactured by working a molten and cast tantalum ingot or billet through forging, annealing and rolling, wherein the structure of the tantalum target comprises a non-recrystallized structure. The tantalum sputtering target having a high deposition speed and excellent uniformity of film, producing less arcings and particles and having excellent film forming properties, and the method capable of stably manufacturing the target can be provided by improving and devising plastic working steps such as forging and rolling, and the heat treatment step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.