Iron silicide sputtering target and method for production thereof
US8173093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2003 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Jul 2, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/786
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is an iron silicide sputtering target in which the oxygen as the gas component in the target is 1000 ppm or less, and a manufacturing method of such iron silicide sputtering target including the steps of melting/casting high purity iron and silicon under high vacuum to prepare an alloy ingot, subjecting the ingot to gas atomization with inert gas to prepare fine powder, and thereafter sintering the fine powder. With this iron silicide sputtering target, the amount of impurities will be reduced, the thickness of the βFeSi2 film during deposition can be made thick, the generation of particles will be reduced, a uniform and homogenous film composition can be yielded, and the sputtering characteristics will be favorable. The foregoing manufacturing method is able to stably produce this target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.