Method of forming fine patterns of a semiconductor device
US8173358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2009 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Aug 16, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/114
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.