Method for manufacturing a semiconductor pressure sensor
US8173513B2 · kind B2 · utility
28Cited by
15References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2008 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Sep 4, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0045
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.