Semiconductor device and related fabrication methods that use compressive material with a replacement gate technique
US8173530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2009 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Dec 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
A semiconductor device and related method of fabricating it are provided. An exemplary fabrication process begins by forming a gate structure overlying a layer of semiconductor material, the gate structure comprising a gate insulator overlying the layer of semiconductor material and comprising a temporary gate element overlying the gate insulator. The process continues by forming a layer of compressive material overlying the gate structure, and by removing a first portion of the compressive material to expose an upper surface of the temporary gate element, while leaving a second portion of the compressive material intact and external to sidewalls of the temporary gate element. Thereafter, at least a portion of the temporary gate element is removed, while leaving the second portion of the compressive material intact, resulting in a gate recess. The process continues by at least partially filling the gate recess with a gate electrode material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.