Kisik Choi
100Patents
9h-index
107Co-inventors
79Inventor score
Filing activity: Sep 22, 2005 → Sep 29, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8048791B2 | Method of forming a semiconductor device | Electricity | 122 | Active |
| US9012319B1 | Methods of forming gate structures with multiple work functions and the resulting products | Electricity | 71 | Active |
| US9093467B1 | Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices | Electricity | 55 | Active |
| US9257348B2 | Methods of forming replacement gate structures for transistors and the resulting devices | Electricity | 31 | Active |
| US7332433B2 | Methods of modulating the work functions of film layers | Electricity | 17 | Expired |
| US9105497B2 | Methods of forming gate structures for transistor devices for CMOS applications | Electricity | 15 | Active |
| US8941184B2 | Low threshold voltage CMOS device | Electricity | 13 | Active |
| US9040404B2 | Replacement metal gate structure for CMOS device | Electricity | 12 | Active |
| US8987126B2 | Integrated circuit and method for fabricating the same having a replacement gate structure | Electricity | 9 | Active |
| US8932923B2 | Semiconductor gate structure for threshold voltage modulation and method of making same | Electricity | 8 | Active |
| US8354719B2 | Finned semiconductor device with oxygen diffusion barrier regions, and related fabrication methods | Electricity | 8 | Active |
| US8999831B2 | Method to improve reliability of replacement gate device | Electricity | 8 | Active |
| US9362283B2 | Gate structures for transistor devices for CMOS applications and products | Electricity | 6 | Active |
| US10748812B1 | Air-gap containing metal interconnects | Electricity | 6 | Active |
| US8552505B1 | Integrated circuits having improved metal gate structures and methods for fabricating same | Electricity | 6 | Active |
| US9349823B2 | Methods of scaling thickness of a gate dielectric structure, methods of forming an integrated circuit, and integrated circuits | Electricity | 5 | Active |
| US10629499B2 | Method and structure for forming a vertical field-effect transistor using a replacement metal gate process | Electricity | 5 | Active |
| US9496143B2 | Metal gate structure for midgap semiconductor device and method of making same | Electricity | 4 | Active |
| US9041118B2 | Replacement metal gate structure for CMOS device | Electricity | 4 | Active |
| US8236686B2 | Dual metal gates using one metal to alter work function of another metal | Electricity | 4 | Active |
| US10943990B2 | Gate contact over active enabled by alternative spacer scheme and claw-shaped cap | Electricity | 4 | Active |
| US9263344B2 | Low threshold voltage CMOS device | Electricity | 4 | Active |
| US9024388B2 | Methods of forming gate structures for CMOS based integrated circuit products and the resulting devices | Electricity | 4 | Active |
| US8786030B2 | Gate-last fabrication of quarter-gap MGHK FET | Electricity | 4 | Active |
| US9472643B2 | Method to improve reliability of replacement gate device | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.