Silicon etch with passivation using plasma enhanced oxidation
US8173547B2 · kind B2 · utility
8Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2008 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Sep 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.