III-nitride current control device and method of manufacture
US8174048B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 21, 2005 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Jan 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.