Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8174067B2 · kind B2 · utility
16Cited by
185References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2009 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Feb 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.