Programming orders for reducing distortion in arrays of multi-level analog memory cells
US8174905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2010 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Aug 26, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.