Methods for reducing recrystallization time for a phase change material
US8178387B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 7, 2010 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Apr 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing recrystallization time for a phase change material of a memory cell element in conjunction with the manufacture of a memory cell device can be carried out as follows. A phase change material, a buffer layer material and a cladding layer material are selected. The buffer layer material is deposited on the substrate, the phase change material is deposited on the buffer layer, and the cladding layer material is deposited on the phase change material to form a memory cell element. The thickness of the phase change material is preferably less than 30 nm and more preferably less than 10 nm. The recrystallization time of the phase change material of the memory cell element is determined. If the recrystallization time is not less than a length of time X, these steps are repeated while changing at least one of the selected materials and material thicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.